Practice question

**Charge carriers** in n-type majority electrons, minority holes, in p-type majority holes, minority electrons, minority concentration reduced due to recombination n_e n_h = n_i², doping increases majority, conductivity σ = e(n_e μ_e + n_h μ_h), increases with doping. Donor ionization energy small ~0.01 eV, electrons easily promoted to conduction band at room temperature. In forward bias, current flows from p-side (positive) to n-side (negative) conventionally, as indicated by the diode symbol’s arrow, due to the flow of majority carriers. Substituting values gives P-side to n-side, which matches expected behaviour for this semiconductor device configuration, confirming doping, depletion and rectifier principles.