Practice question

**Charge carriers** in n-type majority electrons, minority holes, in p-type majority holes, minority electrons, minority concentration reduced due to recombination n_e n_h = n_i², doping increases majority, conductivity σ = e(n_e μ_e + n_h μ_h), increases with doping. Donor ionization energy small ~0.01 eV, electrons easily promoted to conduction band at room temperature. In an n-type semiconductor, each pentavalent donor atom contributes one extra electron, making the electron concentration dependent on doping level, not just intrinsic generation. Substituting values gives Dependent on doping level, which matches expected behaviour for this semiconductor device configuration, confirming doping, depletion and rectifier principles.