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Question

A diode in reverse bias primarily allows current due to:

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Explanation

**Depletion region** also called space-charge region, thickness typically 0.5 μm, contains no mobile carriers, only fixed ions, negative on p-side, positive on n-side, diffusion current due to concentration gradient, drift current due to field, equilibrium when J_drift + J_diff =0, voltage drop mainly across depletion region. In reverse bias, the small current ( μ A ) is due to minority carriers (electrons in p-side, holes in n-side) drifting across the junction under the electric field. Substituting values gives Minority carriers, which matches expected behaviour for this semiconductor device configuration, confirming doping, depletion and rectifier principles.

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