In a reverse-biased p-n junction, the dominant current is due to:
**p-n junction formation** diffusion of holes from p to n and electrons from n to p leaves ionized donors positive on n-side and acceptors negative on p-side, forming space-charge depletion region with electric field directed from n to p (positive to negative), barrier potential V_b ≈0.3 V Ge, 0.7 V Si, opposes further diffusion, drift current due to minority carriers swept by field balances diffusion at equilibrium net current zero. In reverse bias, diffusion is suppressed, and the small current ( μ A ) is due to minority carriers drifting across the junction under the electric field. Substit
Ref: NCERT > Physics Book > Electronic Devices > p-n Junction, Depletion Region and Diode Characteristics