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#donor electrons

3 public questions tagged with this topic.

A Si crystal with \( 5 \times 10^{28} \, \text{atoms} \, \text{m}^{-3} \) is doped with 0.5 ppm of pentavalent impurity.

**Number of carriers** from doping: Ge crystal 4×10²⁸ atoms/m³ doped 2 ppm trivalent gives acceptor atoms 8×10²² m⁻³, holes ≈ that, for 1.5 ppm 6×10²² m⁻³, for 0.5 ppm pentavalent Si 5×10²⁸ atoms/m³ gives 2.5×10²² donors/m³. Acceptor atom effectively negative when accepts electron, donor positive when donates, but crystal neutral. 0.5 ppm = 0.5 × 10⁻⁶ . Number of donor atoms = 0.5 × 10⁻⁶ × 5 × 10²⁸ = 2.5 × 10²² m⁻³ , each contributing one electron. Substituting values gives 2.5 × 10²² m⁻³, which matches expected behaviour for this semiconductor device configuration, confirming doping, depletio

Ref: NCERT > Physics Book > Electronic Devices > Doping, Charge Carriers and Conductivity

In an n-type semiconductor, the number of electrons contributed by donors is:

**Charge carriers** in n-type majority electrons, minority holes, in p-type majority holes, minority electrons, minority concentration reduced due to recombination n_e n_h = n_i², doping increases majority, conductivity σ = e(n_e μ_e + n_h μ_h), increases with doping. Donor ionization energy small ~0.01 eV, electrons easily promoted to conduction band at room temperature. In an n-type semiconductor, each pentavalent donor atom contributes one extra electron, making the electron concentration dependent on doping level, not just intrinsic generation. Substituting values gives Dependent on doping

Ref: NCERT > Physics Book > Electronic Devices > Doping, Charge Carriers and Conductivity

The ionization energy of donor electrons in an n-type semiconductor is:

**Doping** is adding impurity to pure semiconductor to increase carriers, pentavalent (P, As, Sb) donates extra electron, 1 ppm doping in Ge with 4×10²⁸ atoms/m³ gives donor density N_d = 4×10²⁸×10⁻⁶ =4×10²² m⁻³ for 1 ppm, acceptor atoms p-type trivalent B, Al, Ga. Overall charge neutrality maintained because donor ion core positive but electron negative, net neutral. The fifth electron of a pentavalent dopant (e.g., As) in Si or Ge is weakly bound, requiring very small energy (~0.01 eV for Ge, ~0.05 eV for Si) to become free, much less than the intrinsic energy gap. Substituting values gives

Ref: NCERT > Physics Book > Electronic Devices > Doping, Charge Carriers and Conductivity